Datasheet Details
- Part number
- IPB024N08N5
- Manufacturer
- Infineon ↗
- File Size
- 1.09 MB
- Datasheet
- IPB024N08N5-Infineon.pdf
- Description
- MOSFET
IPB024N08N5 Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª 5 Power-Transistor, 80 V IPB024N08N5 Data Sheet Rev.2.0 Final Power Manag.
Features.
Ideal for high frequency switching and sync.
Excellent gate charge x RDS(on) product (FOM).
Very low on-res.
IPB024N08N5 Features
* Ideal for high frequency switching and sync. rec.
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to J
IPB024N08N5 Applications
* Halogen-free according to IEC61249-2-21
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS 80
V
RDS(on),max
2.4
mΩ
ID 120 A
Qoss 116 nC
QG(0V. .10V)
99
nC
OptiMOSª 5 Power-Transistor, 80 V IPB024N08N5
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type / Orde
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