IPB020N10N5 N-Channel MOSFET

INCHANGE

IPB020N10N5 Description

isc N-Channel MOSFET Transistor *.

IPB020N10N5 Features

* With TO-263(D2PAK) packaging
* Ultra-fast body diode
* High speed switching
* Very low on-resistence
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operationz

IPB020N10N5 Applications

* Switching applications INCHANGE Semiconductor IPB020N10N5
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 176 135 704 PD Total Dissipat

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Datasheet Details

Part number: IPB020N10N5
Manufacturer: INCHANGE
File Size: 200.11 KB
Datasheet: IPB020N10N5-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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