IPB020N10N5 Datasheet - INCHANGE

IPB020N10N5, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* With TO-263(D2PAK) packaging
* Ultra-fast body diode
* High speed switching
* Very low on-resistence
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operationz

Applications

* Switching applications INCHANGE Semiconductor IPB020N10N5
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 176 135 704 PD Total Dissipat

IPB020N10N5-INCHANGE.pdf