IPD78CN10N
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Power transistor.
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IPD78CN10N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPD78CN10N,IIPD78CN10N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤78mΩ ·Enhancement mode: ·100% avalanche.
IPD78CN10N - N-Channel MOSFET
(VBsemi)
IPD78CN10N G
IPD78CN10N G Datasheet
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.055 at VGS = 10 V
100
0.057 at VGS = 4..
IPD78CN10NG - Power-Transistor
(Infineon)
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IPD78CN10NG - N-Channel MOSFET
(VBsemi)
IPD78CN10N G
IPD78CN10N G Datasheet
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.055 at VGS = 10 V
100
0.057 at VGS = 4..
IPD70N03S4L-04 - Power-Transistor
(Infineon Technologies)
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating .
IPD70N04S3-07 - Power-Transistor
(Infineon Technologies)
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.
IPD70N10S3-12 - Power Transistor
(Infineon Technologies)
OptiMOS™-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.
IPD70N10S3L-12 - Power-Transistor
(Infineon Technologies)
OptiMOS™-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.
IPD70P04P4-09 - Power-Transistor
(Infineon Technologies)
OptiMOS®-P2 Power-Transistor
Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating t.
IPD70P04P4L-08 - Power-Transistor
(Infineon Technologies)
OptiMOS®-P2 Power-Transistor
Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating te.