IPP054NE8NG - Power-Transistor

This page provides the datasheet information for the IPP054NE8NG, a member of the IPP054NE8N Power-Transistor family.

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.1 mΩ 100 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPP054NE8NG
Manufacturer	Infineon
File Size	493.93 KB
Description	Power-Transistor
Datasheet	IPP054NE8NG Datasheet
Additional preview pages of the IPP054NE8NG datasheet.

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Full PDF Text Transcription

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IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.

Published: Oct 5, 2020 |