Description
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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Features
* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
* Multiple Package Options
* Lead-Free
IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF
HEXFET® Power MOSFET
VDSS
100V
RDS(o
Applications
* SS G GD
D- Pak IRFR3710ZPbF
I- Pak IRFU3710ZPbF
I-Pak Lead form 701 IRFU3710Z-701PbF Refer to page 11 for package outline
G Gate
D Drain
S Source
Base part number IRFU3710ZPbF IRFR3710ZPbF
Package Type I-Pak
D-Pak
Standard Pack Form Tube Tube Tape an