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IRF100P219 Final datasheet
MOSFET
StrongIRFET™ Power MOSFET, 100 V
Features
• Very low on‑resistance Rds(on) • Excellent gate charge x Rds(on)(FOM) • Optimized Qrr • 175°C operating temperature • Product validation according to JEDEC standard • Optimized for broadest availability from distribution partners
Benefits
• Reduced conduction losses • Ideal for high switching frequency • Lower overshoot voltage • Increased reliability versus 150°C rated parts • Pb‑free lead plating; RoHS compliant • Lead free, Halogen‑free according to IEC61249‑2‑21
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Parameter VDS RDS(on),max ID Qoss QG (0V..10V)
Key performance parameters
Value
Unit
100
V
1.
IRF100P219 Datasheet
