IRF1407S
541.27kb
Power mosfet. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist
TAGS
📁 Related Datasheet
IRF1407 - Power MOSFET
(International Rectifier)
Typical Applications l Industrial Motor Drive
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Ope.
IRF1407 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRF1407,IIRF1407
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤7.8mΩ ·Enhancement mode ·Fast Switching Spee.
IRF1407L - Power MOSFET
(International Rectifier)
PD -94335
Benefits
q q q q q q
IRF1407S IRF1407L
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 17.
IRF1407L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤7.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche .
IRF1407L - Power MOSFET
(Infineon)
IRF1407SPbF IRF1407LPbF
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast .
IRF1407LPbF - Power MOSFET
(Infineon)
IRF1407SPbF IRF1407LPbF
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast .
IRF1407LPbF - Power MOSFETs
(International Rectifier)
PD -95486
IRF1407SPbF
Benefits O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fa.
IRF1407PbF - Power MOSFET
(International Rectifier)
Typical Applications l Industrial Motor Drive
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Ope.
IRF1407S - Power MOSFET
(International Rectifier)
PD -94335
Benefits
q q q q q q
IRF1407S IRF1407L
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 17.
IRF1407S - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IRF1407S
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.