IRF140 Datasheet - Harris

IRF140 - N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF140 Features

* 28A and 25A, 80V and 100V

* rDS(ON) = 0.077Ω and 0.100Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power-Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier

IRF140-Harris.pdf