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IRF141

N-Channel Power MOSFETs

IRF141 Features

* 28A and 25A, 80V and 100V

* rDS(ON) = 0.077Ω and 0.100Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power-Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier

IRF141 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF141 Datasheet (66.87 KB)

Preview of IRF141 PDF

Datasheet Details

Part number:

IRF141

Manufacturer:

Harris

File Size:

66.87 KB

Description:

N-channel power mosfets.

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TAGS

IRF141 N-Channel Power MOSFETs Harris

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