IRF221, IRF220 Datasheet - Harris

IRF221, IRF220, N-Channel Power MOSFETs

Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

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IRF220-Harris.pdf

IRF221 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF221, IRF220. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRF221, IRF220

Manufacturer:

Harris

File Size:

68.17 KB

Description:

N-Channel Power MOSFETs

Note:

This datasheet PDF includes multiple part numbers: IRF221, IRF220.
Please refer to the document for exact specifications by model.

Features

* 4.0A and 5.0A, 150V and 200V
* rDS(ON) = 0.8Ω and 1.2Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “G

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09600. Symbol D G

IRF221 Distributors

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