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IRF221, IRF220 - N-Channel Power MOSFETs

IRF221 Description

Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors.

IRF221 Features

* 4.0A and 5.0A, 150V and 200V
* rDS(ON) = 0.8Ω and 1.2Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “G

IRF221 Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09600. Symbol D G

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRF221, IRF220. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF221, IRF220
Manufacturer
Harris
File Size
68.17 KB
Datasheet
IRF220-Harris.pdf
Description
N-Channel Power MOSFETs
Note
This datasheet PDF includes multiple part numbers: IRF221, IRF220.
Please refer to the document for exact specifications by model.

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N-Channel Power MOSFETs Harris
Harris IRF221-like datasheet

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