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IRF221

N-Channel Power MOSFETs

IRF221 Features

* 4.0A and 5.0A, 150V and 200V

* rDS(ON) = 0.8Ω and 1.2Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “G

IRF221 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF221 Datasheet (68.17 KB)

Preview of IRF221 PDF

Datasheet Details

Part number:

IRF221

Manufacturer:

Harris

File Size:

68.17 KB

Description:

N-channel power mosfets.

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TAGS

IRF221 N-Channel Power MOSFETs Harris

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