IRF320 Datasheet, Mosfets, Harris

IRF320 Features

• Mosfets
• 2.8A and 3.3A, 350V and 400V
• rDS(ON) = 1.8Ω and 2.5Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Sw

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Part number:

IRF320

Manufacturer:

Harris

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67.13kb

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📄 Datasheet

Description:

N-channel power mosfets. These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, an

IRF320 Application

• Applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transist

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IRF320

Harris

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