Datasheet4U Logo Datasheet4U.com

IRF320 - N-Channel Power MOSFETs

IRF320 Description

Semiconductor IRF320, IRF321, IRF322, IRF323 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors.

IRF320 Features

* 2.8A and 3.3A, 350V and 400V
* rDS(ON) = 1.8Ω and 2.5Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier

IRF320 Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17404. July 1998 Fe

📥 Download Datasheet

Preview of IRF320 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IRF320
Manufacturer
Harris
File Size
67.13 KB
Datasheet
IRF320-Harris.pdf
Description
N-Channel Power MOSFETs

📁 Related Datasheet

  • IRF3205 - N-Channel Trench Process Power MOSFET Transistor (Thinki Semiconductor)
  • IRF3205A - N-Channel Power MOSFET (nELL)
  • IRF3205H - N-Channel Power MOSFET (nELL)
  • IRF3205L - N-Channel Power MOSFET (International Rectifier)
  • IRF3205LPBF - Power MOSFET (International Rectifier)
  • IRF3205PBF - HEXFET Power MOSFET (International Rectifier)
  • IRF3205S - Power MOSFET (International Rectifier)
  • IRF3205SPBF - Power MOSFET (International Rectifier)

📌 All Tags

N-Channel Power MOSFETs Harris
Harris IRF320-like datasheet

IRF320 Stock/Price