IRF3205L Datasheet - International Rectifier

N-Channel Power MOSFET

IRF3205L General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the desi.

IRF3205L Datasheet (280.90 KB)

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IRF3205L

Manufacturer:

International Rectifier

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280.90 KB

Description:

N-channel power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.

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IRF3205L N-Channel Power MOSFET International Rectifier

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IRF3205L General Description

Datasheet Details

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