Datasheet Details
Part number:
IRF322, IRF320
Manufacturer:
Harris
File Size:
67.13 KB
Description:
N-channel power mosfets.
Note:
This datasheet PDF includes multiple part numbers: IRF322, IRF320.
Please refer to the document for exact specifications by model.
IRF322, IRF320, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as swi
IRF322 Features
* 2.8A and 3.3A, 350V and 400V
* rDS(ON) = 1.8Ω and 2.5Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier
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