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IRF321

N-Channel Power MOSFETs

IRF321 Features

* 2.8A and 3.3A, 350V and 400V

* rDS(ON) = 1.8Ω and 2.5Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier

IRF321 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF321 Datasheet (67.13 KB)

Preview of IRF321 PDF

Datasheet Details

Part number:

IRF321

Manufacturer:

Harris

File Size:

67.13 KB

Description:

N-channel power mosfets.

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TAGS

IRF321 N-Channel Power MOSFETs Harris

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