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IRF321, IRF320 - N-Channel Power MOSFETs

IRF321 Description

Semiconductor IRF320, IRF321, IRF322, IRF323 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors.

IRF321 Features

* 2.8A and 3.3A, 350V and 400V
* rDS(ON) = 1.8Ω and 2.5Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier

IRF321 Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17404. July 1998 Fe

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRF321, IRF320. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF321, IRF320
Manufacturer
Harris
File Size
67.13 KB
Datasheet
IRF320-Harris.pdf
Description
N-Channel Power MOSFETs
Note
This datasheet PDF includes multiple part numbers: IRF321, IRF320.
Please refer to the document for exact specifications by model.

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N-Channel Power MOSFETs Harris
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