IRF3205S

Power MOSFET

International Rectifier

IRF3205S General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the desi.

IRF3205S Datasheet (280.90 KB)

IRF3205S Datasheet Preview — Preview of IRF3205S PDF

Datasheet Details

Part number:

IRF3205S

Manufacturer:

International Rectifier

File Size:

280.90 KB

Description:

Power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.

📁 Related Datasheet

IRF3205 N-Channel Trench Process Power MOSFET Transistor (Thinki Semiconductor)

IRF3205 N-Channel MOSFET Transistor (Inchange Semiconductor)

IRF3205 Power MOSFET (International Rectifier)

IRF3205 N-Channel Power MOSFET (nELL)

IRF3205A N-Channel Power MOSFET (nELL)

IRF3205H N-Channel Power MOSFET (nELL)

IRF3205L N-Channel Power MOSFET (International Rectifier)

IRF3205LPBF Power MOSFET (International Rectifier)

IRF3205PBF HEXFET Power MOSFET (International Rectifier)

IRF3205S N-Channel MOSFET (INCHANGE)

TAGS

IRF3205S Power MOSFET International Rectifier

Image Gallery

IRF3205S General Description

Datasheet Details

File Size:

Description:

IRF3205S Distributor