IRF3205S Datasheet, Mosfet, International Rectifier

PDF File Details

Part number:

IRF3205S

Manufacturer:

International Rectifier

File Size:

280.90kb

Download:

📄 Datasheet

Description:

Power mosfet. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresista

IRF3205S Application

• Applications The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability a

TAGS

IRF3205S

International Rectifier

📁 Related Datasheet

IRF3205 - N-Channel Trench Process Power MOSFET Transistor (Thinki Semiconductor)
IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F.

IRF3205 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m.

IRF3205 - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.

IRF3205 - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR IRF3205 Series N-Channel Power MOSFET (110A, 55Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF3205 is a three-ter.

IRF3205A - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR IRF3205 Series N-Channel Power MOSFET (110A, 55Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF3205 is a three-ter.

IRF3205H - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR IRF3205 Series N-Channel Power MOSFET (110A, 55Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF3205 is a three-ter.

IRF3205L - N-Channel Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.

IRF3205LPBF - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.

IRF3205PBF - HEXFET Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .

IRF3205S - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205S ·DESCRIPTION ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·.