Datasheet4U Logo Datasheet4U.com

IRF3205S Power MOSFET

IRF3205S Description

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon a.

IRF3205S Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectio

📥 Download Datasheet

Preview of IRF3205S PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRF3205STRLPBF - N-Channel MOSFET (INCHANGE)
  • IRF3205 - N-Channel Trench Process Power MOSFET Transistor (Thinki Semiconductor)
  • IRF3205A - N-Channel Power MOSFET (nELL)
  • IRF3205H - N-Channel Power MOSFET (nELL)
  • IRF3205ZS - N-Channel MOSFET (INCHANGE)
  • IRF320 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF321 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF322 - N-Channel MOSFET Transistor (Inchange Semiconductor)

📌 All Tags

Power MOSFET International Rectifier
International Rectifier IRF3205S-like datasheet