IRF3205ZS Datasheet, Mosfet, INCHANGE

IRF3205ZS Features

• Mosfet
• With To-263(D2PAK) package
• Low input capacitance and gate charge
• Low gate input resistance
• 100% avalanche tested
• Minimum Lot-to-Lot variatio

PDF File Details

Part number:

IRF3205ZS

Manufacturer:

INCHANGE

File Size:

254.30kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IRF3205ZS Application

• Applications
• Switching applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 V

TAGS

IRF3205ZS

INCHANGE

📁 Related Datasheet

IRF3205Z - Power MOSFET (International Rectifier)
PD - 94653B AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Re.

IRF3205Z - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205Z，IIRF3205Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.5mΩ ·Enhancement .

IRF3205ZL - Power MOSFET (International Rectifier)
PD - 94653B AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Re.

IRF3205ZLPbF - Power MOSFET (International Rectifier)
PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A.

IRF3205ZPbF - Power MOSFET (International Rectifier)
PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A.

IRF3205ZS - Power MOSFET (International Rectifier)
PD - 94653B AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Re.

IRF3205ZSPbF - Power MOSFET (International Rectifier)
PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A.

IRF3205 - N-Channel Trench Process Power MOSFET Transistor (Thinki Semiconductor)
IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F.

IRF3205 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m.

IRF3205 - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.