IRF3205ZL Datasheet, Mosfet, International Rectifier

IRF3205ZL Features

• Mosfet
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjm

PDF File Details

Part number:

IRF3205ZL

Manufacturer:

International Rectifier

File Size:

303.57kb

Download:

📄 Datasheet

Description:

Power mosfet. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ext

IRF3205ZL Application

• Applications this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Addition

TAGS

IRF3205ZL

International Rectifier

📁 Related Datasheet

IRF3205Z - Power MOSFET (International Rectifier)
PD - 94653B AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Re.

IRF3205Z - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205Z，IIRF3205Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.5mΩ ·Enhancement .

IRF3205ZLPbF - Power MOSFET (International Rectifier)
PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A.

IRF3205ZPbF - Power MOSFET (International Rectifier)
PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A.

IRF3205ZS - Power MOSFET (International Rectifier)
PD - 94653B AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Re.

IRF3205ZS - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IRF3205ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1.

IRF3205ZSPbF - Power MOSFET (International Rectifier)
PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche A.

IRF3205 - N-Channel Trench Process Power MOSFET Transistor (Thinki Semiconductor)
IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F.

IRF3205 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m.

IRF3205 - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.