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IRF3205 - N-Channel Trench Process Power MOSFET Transistor

Datasheet Summary

Description

The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .

Features

  • VDS=55V; ID=105A@ VGS=10V; RDS(ON).

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Datasheet Details

Part number IRF3205
Manufacturer Thinki Semiconductor
File Size 897.94 KB
Description N-Channel Trench Process Power MOSFET Transistor
Datasheet download datasheet IRF3205 Datasheet
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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features ● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application G DS TO-220CB Top View Schematic Diagram VDS = 55 V ID = 105 A RDS(ON) = 5.0 mΩ Table 1.
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