IRF3205 Datasheet, transistor equivalent, Thinki Semiconductor

IRF3205 Features

• Transistor
• VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V
• Ultra Low On-Resistance
• High UIS and UIS 100% Test Application
• Hard Switched and High Frequenc

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IRF3205

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Thinki Semiconductor

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📄 Datasheet

Description:

N-channel trench process power mosfet transistor. The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultr

IRF3205 Application

• Applications Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features
• VDS=55V; ID=105A@ VGS=10V; RDS(ON

TAGS

IRF3205

Thinki Semiconductor

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