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IRF3205 Datasheet N-channel Trench Process Power MOSFET Transistor

Manufacturer: Thinki Semiconductor

Datasheet Details

Part number IRF3205
Manufacturer Thinki Semiconductor
File Size 897.94 KB
Description N-Channel Trench Process Power MOSFET Transistor
Datasheet IRF3205-ThinkiSemiconductor.pdf

IRF3205 Overview

The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching.

IRF3205 Key Features

  • VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V
  • Ultra Low On-Resistance
  • High UIS and UIS 100% Test
  • Hard Switched and High Frequency Circuits
  • Uninterruptible Power Supply
  • Inverter Application

IRF3205 Distributor