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IRF321 - N-Channel MOSFET Transistor

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Description

Drain Current ID=3.3A@ TC=25℃ Drain Source Voltage : VDSS= 350V(Min) Static Drain-Source On-Resistance : RDS(on) =2.5Ω(Max) APPLICATIONS Switching power supplies Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT

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Datasheet Details

Part number IRF321
Manufacturer Inchange Semiconductor
File Size 42.36 KB
Description N-Channel MOSFET Transistor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF321 DESCRIPTION ·Drain Current ID=3.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.5Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 350 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 3.3 A Total Dissipation@TC=25℃ 50 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 3.
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