IRF330 Datasheet, transistor equivalent, Inchange Semiconductor

PDF File Details

Part number:

IRF330

Manufacturer:

Inchange Semiconductor

File Size:

53.81kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

Drain Current ID=5.5A@ TC=25℃

Drain Source Voltage- : VDSS= 400V(Min)

Static Drain-Source On-Resistance :

IRF330 Application

• Applications
• High voltage,high speed applications
• Off-line switching power supplies , UPS,AC and DC motor controls,relay and solen

TAGS

IRF330

Inchange Semiconductor

📁 Related Datasheet

IRF330 - N-Channel Power MOSFET (Samsung semiconductor)
.

IRF330 - N-Channel Power MOSFET (Intersil Corporation)
IRF330 Data Sheet March 1999 File Number 1570.4 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field.

IRF330 - N-Channel Power MOSFET (International Rectifier)
PD - 90335F IRF330 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/54.

IRF330 - N-Channel Power MOSFET (Fairchild Semiconductor)
.

IRF3305 - Power MOSFET (International Rectifier)
PD - 95879 AUTOMOTIVE MOSFET Features O IRF3305 HEXFET® Power MOSFET D O O O O Designed to support Linear Gate Drive Applications 175°C Operating.

IRF3305 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3305， IIRF3305 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m.

IRF3305PBF - Power MOSFET (International Rectifier)
PD - 95758 AUTOMOTIVE MOSFET Features O IRF3305PbF HEXFET® Power MOSFET D O O O O O Designed to support Linear Gate Drive Applications 175°C Opera.

IRF331 - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF331 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switch.

IRF331 - N-Channel Power MOSFET (Fairchild Semiconductor)
.

IRF331 - N-Channel Power MOSFET (Samsung semiconductor)
.