INCHANGE Semiconductor isc N-Channel MOSFET Transi.
Inchange Semiconductor
IRF330 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF330 DESCRIPTION ·Drain Current ID=5.5A@ TC=25℃ ·Drain Source Vol.
Intersil Corporation
IRF330 - N-Channel Power MOSFET
IRF330 Data Sheet March 1999 File Number 1570.4 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field.
International Rectifier
IRF330 - N-Channel Power MOSFET
PD - 90335F IRF330 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/54.
International Rectifier
AUIRF3305 - Power MOSFET
AUTOMOTIVE MOSFET PD - 96336 AUIRF3305 HEXFET® Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT R.
International Rectifier
IRF3305 - Power MOSFET
PD - 95879 AUTOMOTIVE MOSFET Features O IRF3305 HEXFET® Power MOSFET D O O O O Designed to support Linear Gate Drive Applications 175°C Operating.
International Rectifier
IRF3305PBF - Power MOSFET
PD - 95758 AUTOMOTIVE MOSFET Features O IRF3305PbF HEXFET® Power MOSFET D O O O O O Designed to support Linear Gate Drive Applications 175°C Opera.
Infineon
AUIRF3305 - Power MOSFET
AUTOMOTIVE GRADE Features Advanced Planar Technology Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Re.
INCHANGE
IRF3305 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3305， IIRF3305 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m.
