IRF330 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3305， IIRF3305 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

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AUTOMOTIVE MOSFET PD - 96336 AUIRF3305 HEXFET® Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT R

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PD - 95879 AUTOMOTIVE MOSFET Features O IRF3305 HEXFET® Power MOSFET D O O O O Designed to support Linear Gate Drive Applications 175°C Operating

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AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Re

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PD - 90335F IRF330 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/54

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IRF330 Data Sheet March 1999 File Number 1570.4 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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PD - 95758 AUTOMOTIVE MOSFET Features O IRF3305PbF HEXFET® Power MOSFET D O O O O O Designed to support Linear Gate Drive Applications 175°C Opera

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF330 DESCRIPTION ·Drain Current ID=5.5A@ TC=25℃ ·Drain Source Vol

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