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IRF305 - N-Channel MOSFET Transistor

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Description

Drain Current ID=5A@ TC=25℃ Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) Nanosecond Switching Speeds APPLICATIONS Switching power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID

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Datasheet Details

Part number IRF305
Manufacturer Inchange Semiconductor
File Size 42.48 KB
Description N-Channel MOSFET Transistor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF305 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) ·Nanosecond Switching Speeds APPLICATIONS ·Switching power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 400 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 5 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 3.12 30 ℃/W ℃/W isc website：www.iscsemi.
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