Datasheet4U Logo Datasheet4U.com

IRF3205 N-Channel MOSFET Transistor

IRF3205 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 *.

IRF3205 Features

* Static drain-source on-resistance: RDS(on) ≤8.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF3205 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 390 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature 175 Tstg Storage T

📥 Download Datasheet

Preview of IRF3205 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRF3205
Manufacturer
Inchange Semiconductor
File Size
246.30 KB
Datasheet
IRF3205-InchangeSemiconductor.pdf
Description
N-Channel MOSFET Transistor

📁 Related Datasheet

  • IRF3205A - N-Channel Power MOSFET (nELL)
  • IRF3205H - N-Channel Power MOSFET (nELL)
  • IRF3205L - N-Channel Power MOSFET (International Rectifier)
  • IRF3205LPBF - Power MOSFET (International Rectifier)
  • IRF3205PBF - HEXFET Power MOSFET (International Rectifier)
  • IRF3205S - Power MOSFET (International Rectifier)
  • IRF3205SPBF - Power MOSFET (International Rectifier)
  • IRF3205STRLPBF - N-Channel MOSFET (INCHANGE)

📌 All Tags

N-Channel MOSFET Transistor Inchange Semiconductor
Inchange Semiconductor IRF3205-like datasheet