IRF3205 Datasheet - Inchange Semiconductor

IRF3205, N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 *.

Features

* Static drain-source on-resistance: RDS(on) ≤8.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 390 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature 175 Tstg Storage T

IRF3205-InchangeSemiconductor.pdf