Datasheet4U Logo Datasheet4U.com

IRF3256 N-Channel MOSFET

IRF3256 Description

isc N-Channel MOSFET Transistor IRF3256,IIRF3256 *.

IRF3256 Features

* Static drain-source on-resistance: RDS(on) ≤3.4mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High Efficiency Synchronous Rectification in SMPS
* Unint

IRF3256 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

Preview of IRF3256 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRF3256
Manufacturer
INCHANGE
File Size
241.68 KB
Datasheet
IRF3256-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRF320 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF3205 - N-Channel Trench Process Power MOSFET Transistor (Thinki Semiconductor)
  • IRF3205A - N-Channel Power MOSFET (nELL)
  • IRF3205H - N-Channel Power MOSFET (nELL)
  • IRF3205L - N-Channel Power MOSFET (International Rectifier)
  • IRF3205LPBF - Power MOSFET (International Rectifier)
  • IRF3205PBF - HEXFET Power MOSFET (International Rectifier)
  • IRF3205S - Power MOSFET (International Rectifier)

📌 All Tags

INCHANGE IRF3256-like datasheet