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IRF3205Z N-Channel MOSFET

IRF3205Z Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205Z，IIRF3205Z *.

IRF3205Z Features

* Static drain-source on-resistance: RDS(on) ≤6.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF3205Z Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 440 PD Total Dissipation @TC=25℃ 170 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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Datasheet Details

Part number
IRF3205Z
Manufacturer
INCHANGE
File Size
241.59 KB
Datasheet
IRF3205Z-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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