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IRF142 - N-Channel Power MOSFETs

This page provides the datasheet information for the IRF142, a member of the IRF140 N-Channel Power MOSFETs family.

Datasheet Summary

Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Features

  • 28A and 25A, 80V and 100V.
  • rDS(ON) = 0.077Ω and 0.100Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power-Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.

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Datasheet preview – IRF142

Datasheet Details

Part number IRF142
Manufacturer Harris
File Size 66.87 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRF142 Datasheet
Additional preview pages of the IRF142 datasheet.

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Other Datasheets by Harris
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Full PDF Text Transcription

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Semiconductor July 1998 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Features • 28A and 25A, 80V and 100V • rDS(ON) = 0.077Ω and 0.100Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
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