IRF1404PbF Datasheet - International Rectifier

IRF1404PbF, HEXFET Power MOSFET

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe.

IRF1404PbF-InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF1404PbF

Manufacturer:

International Rectifier

File Size:

210.30 KB

Description:

HEXFET Power MOSFET

Features

* part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage incre

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC

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IRF1404PbF HEXFET Power MOSFET International Rectifier

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