IRF1404PbF Datasheet, Mosfet, International Rectifier

IRF1404PbF Features

• Mosfet 121A IAS Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V .2μF .3μF D.U.T.

PDF File Details

Part number:

IRF1404PbF

Manufacturer:

International Rectifier

File Size:

210.30kb

Download:

📄 Datasheet

Description:

Hexfet power mosfet. Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

IRF1404PbF Application

• Applications The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 5

TAGS

IRF1404PbF

International Rectifier

📁 Related Datasheet

IRF1404 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo.

IRF1404 - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.

IRF1404L - Power MOSFET (International Rectifier)
PD -93853C HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switc.

IRF1404LPbF - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .

IRF1404S - Power MOSFET (International Rectifier)
PD -93853C HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switc.

IRF1404S - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .

IRF1404SPbF - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .

IRF1404Z - Power MOSFET (International Rectifier)
PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Swi.

IRF1404Z - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404Z，IIRF1404Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.7mΩ ·Enhancement .

IRF1404ZGPBF - Power MOSFET (International Rectifier)
PD - 96236A IRF1404ZGPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repet.