IRF1404S Datasheet - International Rectifier

IRF1404S Power MOSFET

® l l IRF1404S IRF1404L D VDSS = 40V G S RDS(on) = 0.004Ω ID = 162A Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg.

IRF1404S Features

* D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET® Power MOSFETs www.irf.com 7 IRF1404S/L D2Pak Package Outline D2Pak Part Marking Information THIS IS

IRF1404S_InternationalRectifier.pdf