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IRF1404ZGPBF - Power MOSFET

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ G S.

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Full PDF Text Transcription (Reference)

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PD - 96236A IRF1404ZGPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ G S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.