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IRF1405Z N-Channel MOSFET

IRF1405Z Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1405Z，IIRF1405Z *.

IRF1405Z Features

* Static drain-source on-resistance: RDS(on) ≤4.9mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF1405Z Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 600 PD Total Dissipation @TC=25℃ 230 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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Datasheet Details

Part number
IRF1405Z
Manufacturer
INCHANGE
File Size
242.48 KB
Datasheet
IRF1405Z-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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