* of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. T
IRF1405
International Rectifier
243.81 KB
Power mosfet.
PD -93991A
AUTOMOTIVE MOSFET
Typical Applications
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IRF1405
HEXFET® Power MOSFET
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Electric Power Steering (EPS) Anti-lock Braking System (.
📁 Related Datasheet
IRF140 - N-Channel Power MOSFETs
(Harris)
Semiconductor
July 1998
IRF140, IRF141, IRF142, IRF143
28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs
Features
• 28A and 25.
IRF140 - N-Channel Power MOSFET
(Seme LAB)
IRF140
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
V.
IRF140 - N-Channel Power MOSFET
(Intersil Corporation)
IRF140
Data Sheet March 1999 File Number
2306.3
28A, 100V, 0.077 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field .
IRF140 - N-Channel Power MOSFET
(International Rectifier)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE -TO-3 (TO-204AE)
Product Summary
Part Number
BVDSS
IRF140
100V
RDS(on)
ID
0..
IRF140 - N-Channel Power MOSFET
(Fairchild Semiconductor)
.
IRF140 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance.
IRF1404 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1404，IIRF1404
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.0mΩ ·Enhancement mo.
IRF1404 - Power MOSFET
(International Rectifier)
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche R.
