IRF1405 Datasheet, Mosfet, International Rectifier

IRF1405 Features

• Mosfet of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extr

PDF File Details

Part number:

IRF1405

Manufacturer:

International Rectifier

File Size:

243.81kb

Download:

📄 Datasheet

Description:

Power mosfet. Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing

IRF1405 Application

• Applications q q q q q IRF1405 HEXFET® Power MOSFET D Electric Power Steering (EPS) Anti-lock Braking System (ABS) Wiper Control Climate Control P

TAGS

IRF1405

International Rectifier

📁 Related Datasheet

IRF140 - N-Channel Power MOSFETs (Harris)
Semiconductor July 1998 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Features • 28A and 25.

IRF140 - N-Channel Power MOSFET (Seme LAB)
IRF140 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET V.

IRF140 - N-Channel Power MOSFET (Intersil Corporation)
IRF140 Data Sheet March 1999 File Number 2306.3 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field .

IRF140 - N-Channel Power MOSFET (International Rectifier)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE -TO-3 (TO-204AE) Product Summary Part Number BVDSS IRF140 100V RDS(on) ID 0..

IRF140 - N-Channel Power MOSFET (Fairchild Semiconductor)
.

IRF140 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance.

IRF1404 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo.

IRF1404 - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.

IRF1404L - Power MOSFET (International Rectifier)
PD -93853C HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switc.

IRF1404LPbF - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .