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IRF1404SPbF

Power MOSFET

IRF1404SPbF Features

* ard Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop VDD Ripple ≤ 5% ISD www.irf.com

* VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET® Power MOSFETs 7 IRF1404S/LPbF D2Pak Package Outline Dimensions are

IRF1404SPbF General Description

Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provid.

IRF1404SPbF Datasheet (263.58 KB)

Preview of IRF1404SPbF PDF

Datasheet Details

Part number:

IRF1404SPbF

Manufacturer:

International Rectifier

File Size:

263.58 KB

Description:

Power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .

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IRF1404SPbF Power MOSFET International Rectifier

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