Description
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- ard
Current di/dt
D. U. T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied Voltage
Body Diode Inductor Curent
Forward Drop
VDD
Ripple ≤ 5%
ISD
www. irf. com.
- VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET® Power MOSFETs
7
IRF1404S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 30 S W IT H L OT CODE 8024 AS S E MB LE D ON WW 02, 2000 IN T H E AS S E M B L Y L IN E "L "
IN T E R N.
IRF1404SPbF-InternationalRectifier.pdf
