IRF1404SPbF Power MOSFET

International Rectifier

Description

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe.

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Datasheet Specifications

Part number: IRF1404SPbF
Manufacturer: International Rectifier
File Size: 263.58 KB
Datasheet: IRF1404SPbF-InternationalRectifier.pdf
Description: Power MOSFET

Features

* ard Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop VDD Ripple ≤ 5% ISD www. irf. com
* VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET® Power MOSFETs 7 IRF1404S/LPbF D2Pak Package Outline Dimensions are

Applications

* G PD -95104 IRF1404SPbF IRF1404LPbF HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 0.004Ω S ID = 162A The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mou

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IRF1404SPbF Power MOSFET International Rectifier

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