IRF1404Z
Features l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
HEXFET® Power MOSFET
VDSS = 40V RDS(on) = 3.7mΩ
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Description
ID = 75A
Absolute Maximum Ratings
Parameter
TO-220AB IRF1404Z
D2Pak IRF1404ZS
Max.
190 130 75 750 220
TO-262 IRF1404ZL
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM
PD @TC = 25°C Power...
