IRF1404Z

The IRF1404Z is Power MOSFET designed by International Rectifier.

Product Overview

International Rectifier

Datasheet Details

Part number	IRF1404Z
Manufacturer	International Rectifier
File Size	307.34 KB
Description	Power MOSFET
Datasheet	IRF1404Z-InternationalRectifier.pdf
Additional preview pages of the IRF1404Z datasheet.

Product details

Description

S ID = 75A Absolute Maximum Ratings Parameter TO-220AB IRF1404Z D2Pak IRF1404ZS Max.190 130 75 750 220 TO-262 IRF1404ZL Units A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pu

Features

l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make t.

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Published: May 5, 2014 |