Description
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe.
Features
* ard
Current di/dt
D. U. T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied Voltage
Body Diode Inductor Curent
Forward Drop
VDD
Ripple ≤ 5%
ISD
www. irf. com
* VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET® Power MOSFETs
7
IRF1404S/LPbF
D2Pak Package Outline
Dimensions are
Applications
* G
PD -95104
IRF1404SPbF IRF1404LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.004Ω
S ID = 162A
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mou