IRF1404LPbF, IRF1404SPbF Datasheet - International Rectifier

IRF1404LPbF - Power MOSFET

Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provid.

IRF1404LPbF Features

* ard Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop VDD Ripple ≤ 5% ISD www.irf.com

* VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET® Power MOSFETs 7 IRF1404S/LPbF D2Pak Package Outline Dimensions are

IRF1404SPbF-InternationalRectifier.pdf