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IRF220 - N-Channel Power MOSFETs

IRF220 Description

Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors.

IRF220 Features

* 4.0A and 5.0A, 150V and 200V
* rDS(ON) = 0.8Ω and 1.2Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “G

IRF220 Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09600. Symbol D G

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Datasheet Details

Part number
IRF220
Manufacturer
Harris
File Size
68.17 KB
Datasheet
IRF220-Harris.pdf
Description
N-Channel Power MOSFETs

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N-Channel Power MOSFETs Harris
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