Datasheet4U Logo Datasheet4U.com

IRF2204L - Power MOSFET

This page provides the datasheet information for the IRF2204L, a member of the IRF2204S Power MOSFET family.

Datasheet Summary

Description

Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax G.

📥 Download Datasheet

Datasheet preview – IRF2204L

📁 Similar Datasheet

  • IRF2204 - N-Channel MOSFET (INCHANGE)
  • IRF2204S - N-Channel MOSFET (INCHANGE)
  • IRF220 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF220 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF220 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF220 - N-Channel Power MOSFETs (Harris)
  • IRF220 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF221 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF221 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF221 - N-Channel Power MOSFET (Intersil Corporation)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 94502 AUTOMOTIVE MOSFET IRF2204S Typical Applications ● Electric Power Steering ● 14 Volts Automotive Electrical Systems Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax G Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Published: |