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IRF2204PBF - Power MOSFET

Datasheet Summary

Description

This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area.

Features

  • l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 40V RDS(on) = 3.6mΩ G S ID = 210A†.

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PD - 95490A Typical Applications l Industrial Motor Drive IRF2204PbF HEXFET® Power MOSFET D Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 40V RDS(on) = 3.6mΩ G S ID = 210A† Description This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
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