Part number:
IRF200B211
Manufacturer:
INCHANGE
File Size:
241.13 KB
Description:
N-channel mosfet.
Datasheet Details
IRF200B211 Features
* Static drain-source on-resistance: RDS(on) ≤170mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Synchronous rectifier applications
* Resonant mode power
Datasheet Details
IRF200B211
INCHANGE
241.13 KB
N-channel mosfet.
📁 Related Datasheet
IRF200B211 Power MOSFET (International Rectifier)
IRF200 HIGH POWER WIRE WOUND RESISTOR (ETC)
IRF200P222 MOSFET (Infineon)
IRF200P223 N-Channel MOSFET (INCHANGE)
IRF200P223 MOSFET (Infineon)
IRF200S234 N-Channel MOSFET (INCHANGE)
IRF200S234 IR MOSFET (Infineon)
IRF220 N-Channel Power MOSFET (Samsung semiconductor)
IRF200B211 Distributor