Datasheet Details
- Part number
- IRF2804S
- Manufacturer
- INCHANGE
- File Size
- 265.14 KB
- Datasheet
- IRF2804S-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRF2804S Description
isc N-Channel MOSFET Transistor *.
Static drain-source on-resistance:
RDS(on) ≤6mΩ@VGS= 10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device
performa.
IRF2804S Applications
* Provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
40
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@TC=100℃
20
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