IRF2804S N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.
Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V. 100% avalanche tested. Minimum Lot-to-Lot variations for robust device performa.

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Datasheet Specifications

Part number: IRF2804S
Manufacturer: INCHANGE
File Size: 265.14 KB
Datasheet: IRF2804S-INCHANGE.pdf
Description: N-Channel MOSFET

Applications

* Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@TC=100℃ 20

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N-Channel MOSFET INCHANGE

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