IRF2804S Datasheet - INCHANGE

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IRF2804S N-Channel MOSFET

isc N-Channel MOSFET Transistor *.
Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V. 100% avalanche tested. Minimum Lot-to-Lot variations for robust device performa.

IRF2804S-INCHANGE.pdf

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Datasheet Details

Part number:

IRF2804S

Manufacturer:

INCHANGE

File Size:

265.14 KB

Description:

N-Channel MOSFET

Applications

* Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@TC=100℃ 20

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IRF2804S N-Channel MOSFET INCHANGE

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