Datasheet Details
- Part number
- IRF2805
- Manufacturer
- INCHANGE
- File Size
- 241.04 KB
- Datasheet
- IRF2805-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRF2805 Description
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2805,IIRF2805 *.
IRF2805 Features
* Static drain-source on-resistance:
RDS(on) ≤4.7mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IRF2805 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
55
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
75
IDM
Drain Current-Single Pulsed
700
PD
Total Dissipation @TC=25℃
330
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Te
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