IRF2804L Datasheet, Mosfet, International Rectifier

PDF File Details

Part number:

IRF2804L

Manufacturer:

International Rectifier

File Size:

277.39kb

Download:

📄 Datasheet

Description:

Hexfet power mosfet. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ext

TAGS

📁 Related Datasheet

IRF2804 - HEXFET Power MOSFET (International Rectifier)
PD - 94436C AUTOMOTIVE MOSFET IRF2804 IRF2804S IRF2804L HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resista.

IRF2804 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2804，IIRF2804 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.0mΩ ·Enhancement mo.

IRF2804 - HEXFET Power MOSFET (FreesCale Electronics)
IRF2804 IRF2804S/L Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast S.

IRF2804L - HEXFET Power MOSFET (FreesCale Electronics)
IRF2804 IRF2804S/L Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast S.

IRF2804LPbF - HEXFET Power MOSFET (International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.

IRF2804PbF - HEXFET Power MOSFET (International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T.

IRF2804S - HEXFET Power MOSFET (International Rectifier)
PD - 94436C AUTOMOTIVE MOSFET IRF2804 IRF2804S IRF2804L HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resista.

IRF2804S - HEXFET Power MOSFET (FreesCale Electronics)
IRF2804 IRF2804S/L Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast S.

IRF2804S - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot var.

IRF2804S-7P - AUTOMOTIVE MOSFET (International Rectifier)
PD - 96891 AUTOMOTIVE MOSFET IRF2804S-7P Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Opera.