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IRF2807ZS - N-Channel MOSFET

IRF2807ZS Description

Isc N-Channel MOSFET Transistor IRF2807ZS *.

IRF2807ZS Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF2807ZS Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 89 63 350 PD Total Dissipation @TC=25℃ 170 Tch Max. Operating Ju

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Datasheet Details

Part number
IRF2807ZS
Manufacturer
INCHANGE
File Size
254.54 KB
Datasheet
IRF2807ZS-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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