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IRF2807LPbF - HEXFET Power MOSFET

IRF2807LPbF Description

Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le.
l l IRF2807SPbF IRF2807LPbF D PD - 95945 HEXFET® Power MOSFET VDSS = 75V RDS(on) = 13mΩ S G www.

IRF2807LPbF Features

* or Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRF2807S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W

IRF2807LPbF Applications

* because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF2807L) is available for lowprofile applications. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to

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HEXFET Power MOSFET International Rectifier
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