Datasheet4U Logo Datasheet4U.com

IRF2807Z - N-Channel MOSFET

IRF2807Z Description

isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z *.

IRF2807Z Features

* Static drain-source on-resistance: RDS(on) ≤8.4mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF2807Z Applications

* Resonant mode power supplies
* Battery powered circuits
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 170

📥 Download Datasheet

Preview of IRF2807Z PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRF2807Z
Manufacturer
INCHANGE
File Size
242.45 KB
Datasheet
IRF2807Z-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • IRF2807ZLPBF - AUTOMOTIVE MOSFET (International Rectifier)
  • IRF2807ZPBF - AUTOMOTIVE MOSFET (International Rectifier)
  • IRF2807ZSPBF - AUTOMOTIVE MOSFET (International Rectifier)
  • IRF2807 - Power MOSFET (International Rectifier)
  • IRF2807L - Power MOSFET (International Rectifier)
  • IRF2807LPbF - HEXFET Power MOSFET (International Rectifier)
  • IRF2807PbF - HEXFET Power MOSFET (International Rectifier)
  • IRF2807S - Power MOSFET (International Rectifier)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE IRF2807Z-like datasheet

IRF2807Z Stock/Price