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IRF2807S

HEXFET Power MOSFET

IRF2807S Features

* op Ripple ≤ 5% [ ISD ]

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRF2807S/IRF2807L D2Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2 4 .6 9 (.18 5) 4 .2 0 (.16 5) -B1.3 2 (.05 2) 1.2 2

IRF2807S General Description

l HEXFET® Power MOSFET D IRF2807S IRF2807L VDSS = 75V RDS(on) = 13mΩ G S ID = 82A‡ Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and.

IRF2807S Datasheet (152.87 KB)

Preview of IRF2807S PDF

Datasheet Details

Part number:

IRF2807S

Manufacturer:

International Rectifier

File Size:

152.87 KB

Description:

Hexfet power mosfet.
PD - 94170 Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalan.

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IRF2807S HEXFET Power MOSFET International Rectifier

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