IRF2807ZL
INCHANGE
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N-channel mosfet.
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IRF2807Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRF2807Z, IIRF2807Z
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching S.
IRF2807Z - AUTOMOTIVE MOSFET
(International Rectifier)
PD - 94659A
IRF2807Z
AUTOMOTIVE MOSFET
IRF2807ZS
Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O.
IRF2807ZL - AUTOMOTIVE MOSFET
(International Rectifier)
PD - 94659A
IRF2807Z
AUTOMOTIVE MOSFET
IRF2807ZS
Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O.
IRF2807ZLPBF - AUTOMOTIVE MOSFET
(International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av.
IRF2807ZPBF - AUTOMOTIVE MOSFET
(International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av.
IRF2807ZS - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IRF2807ZS
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1.
IRF2807ZS - AUTOMOTIVE MOSFET
(International Rectifier)
PD - 94659A
IRF2807Z
AUTOMOTIVE MOSFET
IRF2807ZS
Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O.
IRF2807ZSPBF - AUTOMOTIVE MOSFET
(International Rectifier)
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av.
IRF2807 - Power MOSFET
(International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
Fifth Generat.
IRF2807 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤13mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t.