Part number:
IRF200P223
Manufacturer:
INCHANGE
File Size:
237.79 KB
Description:
N-channel mosfet.
IRF200P223 Datasheet (237.79 KB)
* Static drain-source on-resistance: RDS(on)≤11.5mΩ
* Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=270μA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* OR-ring and redundant power switches
* ABSO
IRF200P223 Datasheet (237.79 KB)
IRF200P223
INCHANGE
237.79 KB
N-channel mosfet.
📁 Related Datasheet
IRF200P222 MOSFET (Infineon)
IRF200P223 MOSFET (Infineon)
IRF200 HIGH POWER WIRE WOUND RESISTOR (ETC)
IRF200B211 N-Channel MOSFET (INCHANGE)
IRF200B211 Power MOSFET (International Rectifier)
IRF200S234 N-Channel MOSFET (INCHANGE)
IRF200S234 IR MOSFET (Infineon)
IRF220 N-Channel Power MOSFET (Samsung semiconductor)
IRF220 N-Channel Power MOSFET (Intersil Corporation)
IRF220 N-Channel Power MOSFET (Fairchild Semiconductor)
