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IRF200P223 N-Channel MOSFET

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Description

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF200P223,IIRF200P223 *.

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Datasheet Specifications

Part number
IRF200P223
Manufacturer
INCHANGE
File Size
237.79 KB
Datasheet
IRF200P223-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤11.5mΩ
* Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=270μA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* OR-ring and redundant power switches
* ABSO

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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