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IRF200P223 Datasheet - INCHANGE

IRF200P223 N-Channel MOSFET

IRF200P223 Features

* Static drain-source on-resistance: RDS(on)≤11.5mΩ

* Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=270μA)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* OR-ring and redundant power switches

* ABSO

IRF200P223-INCHANGE.pdf

Preview of IRF200P223 PDF
IRF200P223 Datasheet Preview Page 2

Datasheet Details

Part number:

IRF200P223

Manufacturer:

INCHANGE

File Size:

237.79 KB

Description:

N-channel mosfet.

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IRF200P223 IRF200P223 N-Channel MOSFET INCHANGE

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