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IRF2204 - AUTOMOTIVE MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • RDS(on) = 3.6mΩ ID = 210A†.

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Full PDF Text Transcription

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PD - 94434 AUTOMOTIVE MOSFET IRF2204 Typical Applications ● ● HEXFET® Power MOSFET D Electric Power Steering 14 Volts Automotive Electrical Systems Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S Features ● ● ● ● ● ● RDS(on) = 3.6mΩ ID = 210A† Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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