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IRF224 - N-Channel MOSFET Transistor

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Description

Drain Current ID=3.8A@ TC=25℃ Drain Source Voltage- : VDSS= 250V(Min) Static Drain-Source On-Resistance : RDS(on) =1.1Ω(Max) High Speed Applications APPLICATIONS Switching power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Ts

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Datasheet Details

Part number IRF224
Manufacturer Inchange Semiconductor
File Size 42.46 KB
Description N-Channel MOSFET Transistor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF224 DESCRIPTION ·Drain Current ID=3.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.1Ω(Max) ·High Speed Applications APPLICATIONS ·Switching power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 250 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 3.8 A Total Dissipation@TC=25℃ 40 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient 3.12 30 ℃/W ℃/W isc website：www.iscsemi.
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