IRF231
Description
Drain Current ID=9A@ TC=25℃ Drain Source Voltage- : VDSS= 150V(Min) Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) High Power,High Speed Applications.
- Part: IRF231
- Description: N-Channel MOSFET Transistor
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 42.34 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF231 | Intersil | N-Channel Power MOSFET |
| IRF231 | Samsung Semiconductor | N-Channel Power MOSFET |
| IRF230 | Seme LAB | N-Channel Power MOSFET |
| IRF230 | Intersil | N-Channel Power MOSFET |
| IRF236 | Intersil | N-Channel Power MOSFET |
| IRF237 | Intersil | N-Channel Power MOSFET |
| IRF232 | Samsung Semiconductor | N-Channel Power MOSFET |
| IRF233 | Samsung Semiconductor | N-Channel Power MOSFET |